Product overview
- Part Number
- QPD1013SR
- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
Documents & Media
- Datasheets
- QPD1013SR
Product Attributes
- Gain :
- 21.8 dB
- Id - Continuous Drain Current :
- 1.7 A
- Maximum Drain Gate Voltage :
- 65 V
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 1.2 GHz to 2.7 GHz
- Output Power :
- 178 W
- Package / Case :
- DFN-6
- Packaging :
- Reel
- Pd - Power Dissipation :
- 67 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
Description
RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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