Product overview
- Part Number
- A2G26H281-04SR3
- Manufacturer
- NXP Semiconductors
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V
Documents & Media
- Datasheets
- A2G26H281-04SR3
Product Attributes
- Gain :
- 14.2 dB
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 2496 MHz to 2690 MHz
- Output Power :
- 50 W
- Package / Case :
- NI-780S-4
- Packaging :
- Reel
- Technology :
- GaN
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 125 V
- Vgs - Gate-Source Breakdown Voltage :
- - 8 V, 0 V
Description
RF JFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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