Datasheets

T1G2028536-FS

Gain :

18 dB

Id - Continuous Drain Current :

24 A

Maximum Drain Gate Voltage :

48 V

Maximum Operating Temperature :

+ 250 C

Mounting Style :

SMD/SMT

Operating Frequency :

2 GHz

Output Power :

260 W

Package / Case :

NI-780

Packaging :

Tray

Pd - Power Dissipation :

288 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

36 V

Vgs - Gate-Source Breakdown Voltage :

145 V