Product overview
- Part Number
- T1G4012036-FL
- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
Documents & Media
- Datasheets
- T1G4012036-FL
Product Attributes
- Gain :
- 18.4 dB
- Id - Continuous Drain Current :
- 12 A
- Maximum Drain Gate Voltage :
- - 2.9 V
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 3.3 GHz
- Output Power :
- 24 W
- Package / Case :
- NI-360
- Packaging :
- Tray
- Pd - Power Dissipation :
- 117 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 36 V
Description
RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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