Product overview
- Part Number
- TP65H300G4LSG-TR
- Manufacturer
- Transphorm
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors GAN FET 650V 6.5A PQFN88
Documents & Media
- Datasheets
- TP65H300G4LSG-TR
Product Attributes
- Id - Continuous Drain Current :
- 6.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- PQFN-8
- Packaging :
- Reel
- Pd - Power Dissipation :
- 21 W
- Technology :
- GaN
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Breakdown Voltage :
- - 18 V, + 18 V
Description
RF JFET Transistors GAN FET 650V 6.5A PQFN88
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
YTW-06-04-F-Q-350-060
FW-11-04-F-D-240-205
FW-10-03-F-D-263-065
FW-10-03-F-D-167-120
HW-10-11-F-D-650-SM-LC
CLP-108-02-F-D-BE-PA
SSW-108-22-F-D-VS-P-TR
FW-07-05-L-D-490-159-P-TR
HLE-103-02-S-DV-BE-TR
TW-11-07-T-D-510-SM-A
YTW-06-04-F-Q-355-060
SSW-110-22-G-S-VS-K-TR
FW-10-03-F-D-295-100
FW-10-03-F-D-192-075
TW-05-04-G-D-350-SM-A-P
HLE-103-02-SM-DV-BE-TR
HW-10-11-F-D-650-SM-A
CLP-106-02-G-D-A-P
TW-15-02-T-D-190-SM
CLT-110-02-FM-D-BE-P
