Product overview
- Part Number
- QPD1003
- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
Documents & Media
- Datasheets
- QPD1003
Product Attributes
- Gain :
- 19.9 dB
- Id - Continuous Drain Current :
- 15 A
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 1.2 GHz to 1.4 GHz
- Output Power :
- 540 W
- Package / Case :
- RF-565
- Packaging :
- Tray
- Pd - Power Dissipation :
- 370 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 50 V
- Vgs - Gate-Source Breakdown Voltage :
- 145 V
Description
RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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