Product overview
- Part Number
- TGF2979-SM
- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
Documents & Media
- Datasheets
- TGF2979-SM
Product Attributes
- Gain :
- 11 dB
- Id - Continuous Drain Current :
- 1.8 A
- Maximum Operating Temperature :
- + 225 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- DC to 12 GHz
- Output Power :
- 22 W
- Package / Case :
- QFN-20
- Packaging :
- Tray
- Pd - Power Dissipation :
- 49 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 32 V
- Vgs - Gate-Source Breakdown Voltage :
- - 2.7 V
Description
RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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