Datasheets

QPD1016

Gain :

23.9 dB

Id - Continuous Drain Current :

70 A

Maximum Drain Gate Voltage :

55 V

Maximum Operating Temperature :

+ 85 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

SMD/SMT

Operating Frequency :

DC to 1.7 GHz

Output Power :

680 W

Package / Case :

NI780-2

Pd - Power Dissipation :

714 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

145 V

Vgs - Gate-Source Breakdown Voltage :

- 7 V to 1.5 V