Product overview
- Part Number
- QPD1010
- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
Documents & Media
- Datasheets
- QPD1010
Product Attributes
- Gain :
- 24.7 dB
- Id - Continuous Drain Current :
- 400 mA
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 4 GHz
- Output Power :
- 11 W
- Package / Case :
- QFN-16
- Packaging :
- Waffle
- Pd - Power Dissipation :
- 13.5 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 50 V
- Vgs - Gate-Source Breakdown Voltage :
- 145 V
Description
RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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