Product overview
- Part Number
- TP65H070LSG-TR
- Manufacturer
- Transphorm
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors GAN FET 650V 25A PQFN88
Documents & Media
- Datasheets
- TP65H070LSG-TR
Product Attributes
- Id - Continuous Drain Current :
- 25 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- PQFN-8
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 96 W
- Technology :
- GaN
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Breakdown Voltage :
- - 20 V, + 20 V
Description
RF JFET Transistors GAN FET 650V 25A PQFN88
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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