Product overview
- Part Number
- NPTB00004A
- Manufacturer
- MACOM
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT
Documents & Media
- Datasheets
- NPTB00004A
Product Attributes
- Gain :
- 16 dB
- Id - Continuous Drain Current :
- 1.4 A
- Maximum Operating Temperature :
- + 200 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 6 GHz
- Package / Case :
- SOIC-8
- Packaging :
- Tray
- Pd - Power Dissipation :
- 11.6 W
- Technology :
- GaN-on-Si
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 100 V
Description
RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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