Product overview

Part Number
TGF2819-FL
Manufacturer
Qorvo
Product Category
RF JFET Transistors
Description
RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz

Documents & Media

Datasheets
TGF2819-FL

Product Attributes

Gain :
14 dB
Id - Continuous Drain Current :
7.32 A
Maximum Drain Gate Voltage :
145 V
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Screw Mount
Operating Frequency :
3.5 GHz
Output Power :
100 W
Package / Case :
NI-360
Packaging :
Tray
Pd - Power Dissipation :
86 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
32 V
Vgs - Gate-Source Breakdown Voltage :
- 2.9 V

Description

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz

Price & Procurement

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