Datasheets

QPD1000

Gain :

19 dB

Id - Continuous Drain Current :

817 mA

Maximum Operating Temperature :

+ 85 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

SMD/SMT

Operating Frequency :

30 MHz to 1.215 GHz

Output Power :

24 W

Package / Case :

QFN-8

Packaging :

Tray

Pd - Power Dissipation :

28.8 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

28 V

Vgs - Gate-Source Breakdown Voltage :

100 V