Product overview
- Part Number
- QPD1000
- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
Documents & Media
- Datasheets
- QPD1000
Product Attributes
- Gain :
- 19 dB
- Id - Continuous Drain Current :
- 817 mA
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 30 MHz to 1.215 GHz
- Output Power :
- 24 W
- Package / Case :
- QFN-8
- Packaging :
- Tray
- Pd - Power Dissipation :
- 28.8 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 28 V
- Vgs - Gate-Source Breakdown Voltage :
- 100 V
Description
RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
Price & Procurement
Associated Product
-
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
