Datasheets

TGF3015-SM

Gain :

17.1 dB

Id - Continuous Drain Current :

557 mA

Mounting Style :

SMD/SMT

Operating Frequency :

0.03 GHz to 3 GHz

Output Power :

11 W

Package / Case :

QFN-EP-16

Packaging :

Tray

Pd - Power Dissipation :

15.3 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

32 V

Vgs - Gate-Source Breakdown Voltage :

- 2.7 V