Product overview

Part Number
QPD1006
Manufacturer
Qorvo
Product Category
RF JFET Transistors
Description
RF JFET Transistors 450W 50V 1.2-1.4GHz GaN IMFET

Documents & Media

Datasheets
QPD1006

Product Attributes

Gain :
17.8 dB
Id - Continuous Drain Current :
14 A
Maximum Drain Gate Voltage :
145 V
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
1.2 GHz to 1.4 GHz
Output Power :
450 W
Package / Case :
NI-50CW
Pd - Power Dissipation :
445 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT

Description

RF JFET Transistors 450W 50V 1.2-1.4GHz GaN IMFET

Price & Procurement

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