Product overview
- Part Number
- MT3S113P(TE12L,F)
- Manufacturer
- Toshiba
- Product Category
- RF Bipolar Transistors
- Description
- RF Bipolar Transistors RF Bipolar Transistor .1A 1.6W
Documents & Media
- Datasheets
- MT3S113P(TE12L,F)
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 5.3 V
- Configuration :
- Single
- Continuous Collector Current :
- 100 mA
- DC Collector/Base Gain hfe Min :
- 200
- Emitter- Base Voltage VEBO :
- 0.6 V
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 7.7 GHz
- Package / Case :
- SC-62-3
- Packaging :
- Cut Tape, Reel
- Series :
- MT3S113P
- Technology :
- SiGe
- Transistor Polarity :
- NPN
- Transistor Type :
- Bipolar
Description
RF Bipolar Transistors RF Bipolar Transistor .1A 1.6W
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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