Product overview

Part Number
BFR740L3RHE6327XTSA1
Manufacturer
Infineon Technologies
Product Category
RF Bipolar Transistors
Description
RF Bipolar Transistors NPN Silicn Germanium RF Transistor

Documents & Media

Product Attributes

Collector- Emitter Voltage VCEO Max :
4 V
Continuous Collector Current :
40 mA
DC Collector/Base Gain hfe Min :
160
Emitter- Base Voltage VEBO :
1.2 V
Mounting Style :
SMD/SMT
Operating Frequency :
40 GHz
Package / Case :
TSLP-3
Packaging :
Cut Tape, Reel
Series :
BFR740L3
Technology :
SiGe
Transistor Polarity :
NPN
Transistor Type :
Bipolar

Description

RF Bipolar Transistors NPN Silicn Germanium RF Transistor

Price & Procurement

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