Product overview
- Part Number
- HMC-ALH444
- Manufacturer
- Analog Devices Inc.
- Product Category
- RF Amplifier
- Description
- RF Amplifier GaAs HEMT WBand lo Noise amp, 1 - 12 GHz
Documents & Media
- Datasheets
- HMC-ALH444
Product Attributes
- Gain :
- 17 dB
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- NF - Noise Figure :
- 1.75 dB
- OIP3 - Third Order Intercept :
- 28 dBm
- Operating Frequency :
- 1 GHz to 12 GHz
- Operating Supply Current :
- 55 mA
- Operating Supply Voltage :
- 5 V
- P1dB - Compression Point :
- 19 dBm
- Package / Case :
- Die
- Packaging :
- Gel Pack
- Series :
- HMC-ALH444G
- Technology :
- GaAs
- Type :
- Low Noise Amplifiers
Description
RF Amplifier GaAs HEMT WBand lo Noise amp, 1 - 12 GHz
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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