Product overview
- Part Number
- A3I35D012WNR1
- Manufacturer
- NXP Semiconductors
- Product Category
- RF Amplifier
- Description
- RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 1.8 W Avg., 28 V
Documents & Media
- Datasheets
- A3I35D012WNR1
Product Attributes
- Gain :
- 27.8 dB
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 3.2 GHz to 4 GHz
- Operating Supply Current :
- 260 mA
- Operating Supply Voltage :
- 28 V
- Package / Case :
- TO-270WB-17
- Packaging :
- Cut Tape, Reel
- Technology :
- SI
- Type :
- Power Amplifiers
Description
RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 1.8 W Avg., 28 V
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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