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Semiconductors
Discrete Semiconductors
Transistors
RF Transistors
RF Bipolar Transistors
Manufacturer：
NXP Semiconductors
(4)
Advanced Semiconductor, Inc.
(2)
Infineon Technologies
(2)
onsemi
(3)
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Series：
2SC5551A
(1)
BFR380L3
(2)
Packaging：
Cut Tape, MouseReel, Reel
(6)
Cut Tape, Reel
(2)
Reel
(1)
Tray
(2)
Package / Case：
317D-02
(1)
Macro-X
(1)
PCP-3
(1)
SOT-343F
(4)
SOT-623-3
(2)
TSLP
(1)
TSLP-3
(1)
Minimum Operating Temperature：
- 55 C
(5)
- 65 C
(2)
Operating Frequency：
1 GHz
(1)
14 GHz
(2)
7 GHz
(1)
8 GHz
(1)
800 MHz
(1)
Collector- Emitter Voltage VCEO Max：
10 V
(2)
15 V
(1)
16 V
(1)
30 V
(1)
5.5 V
(4)
6 V
(2)
Emitter- Base Voltage VEBO：
1.5 V
(1)
2 V
(4)
2.5 V
(5)
4 V
(1)
Continuous Collector Current：
10 mA
(1)
200 mA
(1)
3 mA
(1)
30 mA
(2)
300 mA
(1)
400 mA
(1)
70 mA
(2)
80 mA
(2)
Transistor Type：
Bipolar
(10)
Bipolar Power
(1)
Selected conditions：
RF Bipolar Transistors
Maximum Operating Temperature : + 150 C
DC Collector/Base Gain hfe Min : 90
11 Records
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Part Number
Manufacturer
Description
Price
Stock
Operation
2SC5551AF-TD-E
onsemi
RF Bipolar Transistors RF...
-
In stock
MOQ：1
INC：1
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2SC5551AF-TD-E
onsemi
RF Bipolar Transistors RF...
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