- Series:
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- Package / Case:
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- Minimum Operating Temperature:
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- Maximum Operating Temperature:
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- Mounting Style:
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- Pd - Power Dissipation:
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- Collector- Emitter Voltage VCEO Max:
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- Collector-Emitter Saturation Voltage:
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- Continuous Collector Current at 25 C:
-
- Maximum Gate Emitter Voltage:
-
- Selected conditions:
410 Records
Image | Part Number | Manufacturer | Description | Price | Stock | Operation |
---|---|---|---|---|---|---|
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Infineon Technologies | IGBT Transistors HOME... |
|
2,353
MOQ:1
INC:1
|
Get quote Add to cart | |
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Infineon Technologies | IGBT Transistors INDU... |
|
180
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors INDU... |
|
212
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors INDU... |
|
236
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors HOME... |
|
130
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors INDU... |
|
236
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors SIC D... |
|
474
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors SIC D... |
|
754
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors SIC D... |
|
358
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors SIC D... |
|
376
MOQ:1
INC:1
|
Get quote Add to cart |