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IGBT Transistors
Package / Case：
TO-247-3
(1)
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Selected conditions：
IGBT Transistors
Maximum Gate Emitter Voltage : 20 V
Pd - Power Dissipation : 270 W
Collector-Emitter Saturation Voltage : 1.8 V
2 Records
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Part Number
Manufacturer
Description
Price
Stock
Operation
IXYQ30N65B3D1
IXYS
IGBT Transistors IGBT...
300+
$5.93
In stock
MOQ：300
INC：30
Get quote
IXYH30N65B3D1
IXYS
IGBT Transistors IGBT...
300+
$7.22
In stock
MOQ：300
INC：30
Get quote
IXYQ30N65B3D1
IXYS
IGBT Transistors IGBT...
Stock : 0
300+
$5.93
Inquiry
IXYH30N65B3D1
IXYS
IGBT Transistors IGBT...
Stock : 0
300+
$7.22
Inquiry
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