- Manufacturer:
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- Toshiba (1)
- Series:
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- Minimum Operating Temperature:
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- Maximum Operating Temperature:
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- Pd - Power Dissipation:
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- Collector- Emitter Voltage VCEO Max:
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- Collector-Emitter Saturation Voltage:
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- Maximum Gate Emitter Voltage:
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- Selected conditions:
24 Records
Image | Part Number | Manufacturer | Description | Price | Stock | Operation |
---|---|---|---|---|---|---|
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Toshiba | IGBT Transistors DISC... |
|
263
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
STMicroelectronics | IGBT Transistors 600V 20... |
|
1
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors LOW L... |
|
84
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors IGBT... |
|
254
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors IGBT... |
|
157
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors 600V 20... |
|
6
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors INDU... |
|
10
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors 600V 20... |
|
7
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | IGBT Transistors IGBT... |
|
175
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
STMicroelectronics | IGBT Transistors PTD I... |
|
9
MOQ:1
INC:1
|
Get quote Add to cart |