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IGBT Transistors
Series：
GT40RR21
(1)
GT50J341
(1)
Pd - Power Dissipation：
200 W
(1)
230 W
(1)
Collector- Emitter Voltage VCEO Max：
1350 V
(1)
600 V
(1)
Continuous Collector Current at 25 C：
40 A
(1)
50 A
(1)
Selected conditions：
IGBT Transistors
Toshiba
Collector-Emitter Saturation Voltage : 1.6 V
2 Records
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Part Number
Manufacturer
Description
Price
Stock
Operation
GT50J341,Q
Toshiba
IGBT Transistors LOW S...
1+
$3.70
10+
$3.33
50+
$3.14
100+
$2.72
500+
$2.31
In stock
MOQ：1
INC：1
Get quote
GT40RR21(STA1,E
Toshiba
IGBT Transistors DISC...
1+
$3.76
10+
$3.38
25+
$3.19
100+
$2.76
500+
$2.35
In stock
MOQ：1
INC：1
Get quote
GT50J341,Q
Toshiba
IGBT Transistors LOW S...
Stock : 0
1+
$3.70
10+
$3.33
50+
$3.14
100+
$2.72
500+
$2.31
Inquiry
GT40RR21(STA1,E
Toshiba
IGBT Transistors DISC...
Stock : 0
1+
$3.76
10+
$3.38
25+
$3.19
100+
$2.76
500+
$2.35
Inquiry
*
Part：
Manufacturer：
Packaging：
*
required quantity：
Target Price (USD)：
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