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Semiconductors
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IGBT Transistors
Collector- Emitter Voltage VCEO Max：
600 V
(1)
650 V
(1)
Collector-Emitter Saturation Voltage：
1.55 V
(1)
1.77 V
(1)
Selected conditions：
IGBT Transistors
Pd - Power Dissipation : 830 W
Maximum Operating Temperature : + 175 C
Continuous Collector Current at 25 C : 250 A
2 Records
Image
Part Number
Manufacturer
Description
Price
Stock
Operation
IXYN150N60B3
IXYS
IGBT Transistors IGBT...
1+
$39.29
10+
$36.23
30+
$34.59
100+
$30.93
In stock
MOQ：1
INC：1
Get quote
IXYN120N65B3D1
IXYS
IGBT Transistors IGBT...
1+
$39.41
10+
$36.76
30+
$35.22
100+
$31.92
In stock
MOQ：1
INC：1
Get quote
IXYN150N60B3
IXYS
IGBT Transistors IGBT...
Stock : 0
1+
$39.29
10+
$36.23
30+
$34.59
100+
$30.93
Inquiry
IXYN120N65B3D1
IXYS
IGBT Transistors IGBT...
Stock : 0
1+
$39.41
10+
$36.76
30+
$35.22
100+
$31.92
Inquiry
*
Part：
Manufacturer：
Packaging：
*
required quantity：
Target Price (USD)：
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