- Maximum Operating Temperature:
-
- Configuration:
-
- Pd - Power Dissipation:
-
- Collector- Emitter Voltage VCEO Max:
-
- Collector-Emitter Saturation Voltage:
-
- Continuous Collector Current at 25 C:
-
- Gate-Emitter Leakage Current:
-
- Selected conditions:
27 Records
Image | Part Number | Manufacturer | Description | Price | Stock | Operation |
---|---|---|---|---|---|---|
Microsemi / Microchip | IGBT Modules DOR CC8... |
|
48
MOQ:1
INC:1
|
Get quote Add to cart | ||
Microsemi / Microchip | IGBT Modules CC8022 |
|
33
MOQ:1
INC:1
|
Get quote Add to cart | ||
Microsemi / Microchip | IGBT Modules DOR CC8... |
|
3
MOQ:1
INC:1
|
Get quote Add to cart | ||
Microsemi / Microchip | IGBT Modules DOR CC8... |
|
50
MOQ:1
INC:1
|
Get quote Add to cart | ||
Microsemi / Microchip | IGBT Modules CC8044 |
|
46
MOQ:1
INC:1
|
Get quote Add to cart | ||
Microsemi / Microchip | IGBT Modules Trench Fie... |
|
49
MOQ:1
INC:1
|
Get quote Add to cart | ||
Microsemi / Microchip | IGBT Modules DOR CC8... |
|
50
MOQ:1
INC:1
|
Get quote Add to cart | ||
Microsemi / Microchip | IGBT Modules DOR CC8... |
|
38
MOQ:1
INC:1
|
Get quote Add to cart | ||
Microsemi / Microchip | IGBT Modules CC8064 |
|
34
MOQ:1
INC:1
|
Get quote Add to cart | ||
Microsemi / Microchip | IGBT Modules CC8102 |
|
14
MOQ:1
INC:1
|
Get quote Add to cart |