- Package / Case：
-
- Maximum Operating Temperature：
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- Pd - Power Dissipation：
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- Collector- Emitter Voltage VCEO Max：
-
- Collector-Emitter Saturation Voltage：
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- Continuous Collector Current at 25 C：
-
- Gate-Emitter Leakage Current：
-
- Selected conditions：
106 Records
| Image | Part Number | Manufacturer | Description | Price | Stock | Operation |
|---|---|---|---|---|---|---|
|
Infineon Technologies | IGBT Modules HYBRID... |
|
11
MOQ：1
INC：1
|
Get quote Add to cart | |
|
|
Infineon Technologies | IGBT Modules N-CH 1.2K... |
|
46
MOQ：1
INC：1
|
Get quote Add to cart | |
|
|
Infineon Technologies | IGBT Modules N-CH 1.2K... |
|
38
MOQ：1
INC：1
|
Get quote Add to cart | |
|
|
Infineon Technologies | IGBT Modules LOW POW... |
|
12
MOQ：1
INC：1
|
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|
|
Infineon Technologies | IGBT Modules 1200V 25A ... |
|
3
MOQ：1
INC：1
|
Get quote Add to cart | |
|
|
Infineon Technologies | IGBT Modules 1200V 50A ... |
|
75
MOQ：1
INC：1
|
Get quote Add to cart | |
|
|
Infineon Technologies | IGBT Modules 1200V 75A ... |
|
35
MOQ：1
INC：1
|
Get quote Add to cart | |
|
|
Infineon Technologies | IGBT Modules 1200V 75A ... |
|
14
MOQ：1
INC：1
|
Get quote Add to cart | |
|
|
Infineon Technologies | IGBT Modules 1200V 150A... |
|
51
MOQ：1
INC：1
|
Get quote Add to cart | |
|
|
Infineon Technologies | IGBT Modules 1200V 40A ... |
|
69
MOQ：1
INC：1
|
Get quote Add to cart |
