- Manufacturer:
-
- Toshiba (7)
- Package / Case:
-
- Minimum Operating Temperature:
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- Maximum Operating Temperature:
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- Configuration:
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- Pd - Power Dissipation:
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- Collector- Emitter Voltage VCEO Max:
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- Collector-Emitter Saturation Voltage:
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- Collector- Base Voltage VCBO:
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- Gain Bandwidth Product fT:
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- Selected conditions:
10 Records
Image | Part Number | Manufacturer | Description | Price | Stock | Operation |
---|---|---|---|---|---|---|
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Central Semiconductor | Bipolar Transistors - BJT... |
|
9,765
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Diodes Incorporated | Bipolar Transistors - BJT... |
|
1,000
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
1,697
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
54,022
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Diodes Incorporated | Bipolar Transistors - BJT... |
|
262
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
5,852
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
2,272
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
29,989
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
26,972
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
58,494
MOQ:1
INC:1
|
Get quote Add to cart |