- Series:
-
- Package / Case:
-
- Minimum Operating Temperature:
-
- Maximum Operating Temperature:
-
- Configuration:
-
- Pd - Power Dissipation:
-
- Collector-Emitter Saturation Voltage:
-
- Transistor Polarity:
-
- Collector- Base Voltage VCBO:
-
- Gain Bandwidth Product fT:
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- Selected conditions:
55 Records
Image | Part Number | Manufacturer | Description | Price | Stock | Operation |
---|---|---|---|---|---|---|
![]() |
onsemi | Bipolar Transistors - BJT... |
|
1,797
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
76,484
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
17,949
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
29,989
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
26,981
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
8,916
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
26,972
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
42,000
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
58,494
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
12,000
MOQ:1
INC:1
|
Get quote Add to cart |