- Manufacturer:
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- Toshiba (10)
- Series:
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- Package / Case:
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- Maximum Operating Temperature:
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- Configuration:
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- Pd - Power Dissipation:
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- Collector- Emitter Voltage VCEO Max:
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- Collector-Emitter Saturation Voltage:
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- Emitter- Base Voltage VEBO:
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- Collector- Base Voltage VCBO:
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- Gain Bandwidth Product fT:
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- Selected conditions:
23 Records
Image | Part Number | Manufacturer | Description | Price | Stock | Operation |
---|---|---|---|---|---|---|
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ROHM Semiconductor | Bipolar Transistors - BJT... |
|
4,948
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Diodes Incorporated | Bipolar Transistors - BJT... |
|
2,878
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
5,847
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
4,855
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
ROHM Semiconductor | Bipolar Transistors - BJT... |
|
1,622
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
2,641
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
ROHM Semiconductor | Bipolar Transistors - BJT... |
|
389
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
1,764
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
8,187
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
3,152
MOQ:1
INC:1
|
Get quote Add to cart |