- Series:
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- Package / Case:
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- Minimum Operating Temperature:
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- Maximum Operating Temperature:
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- Mounting Style:
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- Configuration:
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- Pd - Power Dissipation:
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- Collector-Emitter Saturation Voltage:
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- Collector- Base Voltage VCBO:
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- Maximum DC Collector Current:
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- Gain Bandwidth Product fT:
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44 Records
Image | Part Number | Manufacturer | Description | Price | Stock | Operation |
---|---|---|---|---|---|---|
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STMicroelectronics | Bipolar Transistors - BJT... |
|
13,762
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
onsemi / Fairchild | Bipolar Transistors - BJT... |
|
21,339
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
5,847
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
1,604
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
4,855
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Nexperia | Bipolar Transistors - BJT... |
|
9,857
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
2,641
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
onsemi | Bipolar Transistors - BJT... |
|
618
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Nexperia | Bipolar Transistors - BJT... |
|
In stock
MOQ:1
INC:1
|
Get quote | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
1,293
MOQ:1
INC:1
|
Get quote Add to cart |