- Series:
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- Package / Case:
-
- Minimum Operating Temperature:
-
- Mounting Style:
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- Configuration:
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- Pd - Power Dissipation:
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- Collector-Emitter Saturation Voltage:
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- Transistor Polarity:
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- Gain Bandwidth Product fT:
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43 Records
Image | Part Number | Manufacturer | Description | Price | Stock | Operation |
---|---|---|---|---|---|---|
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Nexperia | Bipolar Transistors - BJT... |
|
44,633
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Taiwan Semiconductor | Bipolar Transistors - BJT... |
|
4,974
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Nexperia | Bipolar Transistors - BJT... |
|
9,099
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Nexperia | Bipolar Transistors - BJT... |
|
6,257
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
onsemi | Bipolar Transistors - BJT... |
|
98
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Taiwan Semiconductor | Bipolar Transistors - BJT... |
|
1,034
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | Bipolar Transistors - BJT... |
|
224,650
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | Bipolar Transistors - BJT... |
|
6,607
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | Bipolar Transistors - BJT... |
|
5,335
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | Bipolar Transistors - BJT... |
|
11,999
MOQ:1
INC:1
|
Get quote Add to cart |