- Manufacturer:
-
- Diodes Incorporated (11)
- Nexperia (35)
- Series:
-
- Package / Case:
-
- Maximum Operating Temperature:
-
- Mounting Style:
-
- Configuration:
-
- Pd - Power Dissipation:
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- Collector-Emitter Saturation Voltage:
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- Transistor Polarity:
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- Gain Bandwidth Product fT:
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106 Records
Image | Part Number | Manufacturer | Description | Price | Stock | Operation |
---|---|---|---|---|---|---|
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Nexperia | Bipolar Transistors - BJT... |
|
25,606
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Diodes Incorporated | Bipolar Transistors - BJT... |
|
7,775
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Diodes Incorporated | Bipolar Transistors - BJT... |
|
5,682
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Diodes Incorporated | Bipolar Transistors - BJT... |
|
819
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Diodes Incorporated | Bipolar Transistors - BJT... |
|
11,904
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Diodes Incorporated | Bipolar Transistors - BJT... |
|
3,646
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Nexperia | Bipolar Transistors - BJT... |
|
289
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Diodes Incorporated | Bipolar Transistors - BJT... |
|
3,000
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Taiwan Semiconductor | Bipolar Transistors - BJT... |
|
2,574
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Infineon Technologies | Bipolar Transistors - BJT... |
|
17,875
MOQ:1
INC:1
|
Get quote Add to cart |