- Series:
-
- Package / Case:
-
- Minimum Operating Temperature:
-
- Maximum Operating Temperature:
-
- Configuration:
-
- Pd - Power Dissipation:
-
- Collector-Emitter Saturation Voltage:
-
- Gain Bandwidth Product fT:
-
11 Records
Image | Part Number | Manufacturer | Description | Price | Stock | Operation |
---|---|---|---|---|---|---|
![]() |
Nexperia | Bipolar Transistors - BJT... |
|
31,602
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
747
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Central Semiconductor | Bipolar Transistors - BJT... |
|
9,279
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Central Semiconductor | Bipolar Transistors - BJT... |
|
5,981
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
20,667
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Nexperia | Bipolar Transistors - BJT... |
|
6,513
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
10,916
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Nexperia | Bipolar Transistors - BJT... |
|
16,067
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
6,099
MOQ:1
INC:1
|
Get quote Add to cart | |
![]() |
Toshiba | Bipolar Transistors - BJT... |
|
32,199
MOQ:1
INC:1
|
Get quote Add to cart |